![]() For example, 1.25V to 1.35V is sufficient for most memory overclocks. It's one of the more sensitive voltages, so use small increments. VCCSA: This is the voltage for the system agent but helps for memory overclocks. 1.2V is sufficient for DDR5-4800 to DDR5-6000, whereas 1.4V should be high enough for DDR5-6200 and beyond. However, in some cases, desynchronizing the voltages and running a higher VDDQ (50 mV - 100 mV) can help stabilize memory overclocks.ĬPU VDDQ: The voltage that goes to the processor's memory controller. For everyday use, we recommend keeping it below 1.4V for safe measure.ĭRAM VDDQ: The voltage feeds the memory chip's I/O. You can leave the other voltages at the discretion of your motherboard.ĭRAM VDD: This voltage is one of the most critical as it powers the memory chips. ![]() There are quite a few voltage settings that have an impact on memory overclocking, but the average user can get by with tweaking four of them. However, that's beyond the scope of this article, so we won't go down that rabbit hole.ģ. Memory overclocking is more than just playing with the four primary timings: You can get significant performance gains from tweaking secondary and even tertiary timings. We've been able to get Samsung and SK hynix ICs to run at 1T but didn't have much luck with Micron ICs. For DDR5, the default command rate is 2T however, 1T is possible depending on the IC. You can also try playing with the command rate if you're feeling adventurous. If it's stable, you can try reducing one clock cycle on the timings to optimize your overclock. If your overclock is unstable, add one clock cycle to the timings. We recommend you start with your memory kit's advertised timings and go from there. The trick is to use baby steps, increasing the individual timings by one or two clock cycle increments and then testing for stability. DDR5 has the same four primary memory timings (CAS Latency, tRCD, tRP, and tRAS) as DDR4. This step is the trial-and-error part of the overclocking process and can be time-consuming. As such, you should only use Gear 2 for the majority of DDR5 memory overclocking, though extreme overclockers using liquid nitrogen might need to step up to Gear 4.Ģ. Gear 1 doesn't work with DDR5 as the default configuration is Gear 2, and Gear 4 won't come into play until you probably hit data rates as high as DDR5-8000 and above. ![]() Finally, Gear 4 runs the memory four times faster than the memory controller (4:1). The memory and memory controller run at the same frequency in Gear 1(1:1), while Gear 2 lets the memory operate twice as fast as the memory controller (2:1). However, on Alder Lake, the 100:100 ratio offers similar performance.Īlder Lake has three gear modes for memory, but Gear 2 is the only setting that really matters for enthusiast-level DDR5 overclocking. With Rocket Lake, the 100:133 ratio performs better. Like Rocket Lake, Alder Lake also offers the two BCLK/DRAM ratios: 100:100 and 100:133. Nonetheless, specific data rates are only available with the 100:133 ratio, such as DDR5-5333 or DDR5-6666. There are two approaches: You can choose a high data rate and work down from there, or you can pick a more modest data rate and work up to find the ceiling for your memory kit.įor reference, the default ratio for DDR5 is 100:100. The first step is determining how far you want to push your DDR5 memory. Nonetheless, we've spoken with various memory vendors, and the consensus is that 1.4V is the maximum voltage for daily usage. Sadly, we haven't received any feedback on the matter. We've contacted SK hynix and Micron representatives to inquire about their respective ICs. Samsung told us that the company does not guarantee an overclocking voltage for its ICs, but the absolute maximum DC of the drain voltage is 1.4V. When overclocking memory, we first try to determine the maximum safe voltage we can use for the different ICs. But, at least for now, we rank the ICs in this order for overclocking: SK hynix M-die, Samsung B-die, and Micron A-die. The situation could change as time goes by and the ICs mature, or new ICs hit the market. For example, we've been able to get M-die as high as DDR5-6600, equally overclock a DDR5-4800 M-die memory kit, and find stability at DDR5-6000.Īgain, we have to emphasize that these are just our preliminary observations with the current generation of ICs. Based on our experience with different DDR5 memory kits, SK hynix's M-die ICs have the highest overclocking potential. With DDR5, we find that SK hynix M-die can run similar timings to B-die. In the DDR4 days, Samsung B-die ICs were the golden standard for tight timings.
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